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Interconnect and current density stress: an introduction to electromigration-aware design

Published: 02 April 2005 Publication History

Abstract

Electromigration due to excessive current density stress in the interconnect can cause the premature failure of an electronic circuit. The ongoing reduction of circuit feature sizes has aggravated the problem over the last couple of years. It is therefore an important reliability issue to consider electromigration-related design parameters during interconnect design. In this tutorial, we give an introduction to the electromigration problem and its relationship to current density. We then present various physical design constraints that affect electromigration. Finally, we introduce components of an electromigration-aware physical design flow.

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    cover image ACM Conferences
    SLIP '05: Proceedings of the 2005 international workshop on System level interconnect prediction
    April 2005
    114 pages
    ISBN:1595930337
    DOI:10.1145/1053355
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    Publication History

    Published: 02 April 2005

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    Author Tags

    1. current density
    2. electromigration
    3. interconnect
    4. interconnect reliability
    5. layout
    6. physical design

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    SLIP05: International Workshop on System Level Interconnect Prediction
    April 2 - 3, 2005
    California, San Francisco, USA

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    • (2019)Experimental realization of electromigration at high power for copper wiresJournal of Energy Systems10.30521/jes.6169823:4(158-167)Online publication date: 31-Dec-2019
    • (2019)Performance Analysis of Squarely Packed Polymorphic SWCNT Interconnect2019 IEEE 10th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)10.1109/UEMCON47517.2019.8992975(1199-1203)Online publication date: Oct-2019
    • (2019)Electromigration Analysis of VLSI Circuits Using the Finite Element MethodVLSI-SoC: Opportunities and Challenges Beyond the Internet of Things10.1007/978-3-030-15663-3_7(133-152)Online publication date: 17-May-2019
    • (2019)Modeling the impact of fundamental and quantum resistance on the performance of SWCNT‐based RLC interconnectsInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields10.1002/jnm.269833:1Online publication date: 6-Nov-2019
    • (2018)Mitigating Electromigration in Physical DesignFundamentals of Electromigration-Aware Integrated Circuit Design10.1007/978-3-319-73558-0_4(99-148)Online publication date: 24-Feb-2018
    • (2018)Fundamentals of ElectromigrationFundamentals of Electromigration-Aware Integrated Circuit Design10.1007/978-3-319-73558-0_2(13-60)Online publication date: 24-Feb-2018
    • (2017)ELECTROMIGRATION – A BRIEF SURVEYi-manager's Journal on Circuits and Systems10.26634/jcir.5.3.138145:3(31)Online publication date: 2017
    • (2017)ESD Behavior of MWCNT Interconnects—Part I: Observations and InsightsIEEE Transactions on Device and Materials Reliability10.1109/TDMR.2017.275692417:4(600-607)Online publication date: Dec-2017
    • (2017)Massively parallel first-principles simulation of electron dynamics in materialsJournal of Parallel and Distributed Computing10.1016/j.jpdc.2017.02.005106:C(205-214)Online publication date: 1-Aug-2017
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