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Low-power circuits using dynamic threshold devices

Published: 17 April 2005 Publication History

Abstract

We present simulations for ultra-thin body, fully-depleted, double-gate (DG) silicon-on-insulator (SOI) devices that can be readily optimized for both static power loss and performance by dynamically shifting the threshold voltage during operation. A small number of simple circuits are analyzed and it is demonstrated that subthreshold power can be reduced by a factor in excess of 103 for these examples.

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Cited By

View all
  • (2012)Low-power design technique with ambipolar double gate devicesProceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures10.1145/2765491.2765495(14-21)Online publication date: 4-Jul-2012
  • (2009)Low-power FinFET circuit synthesis using multiple supply and threshold voltagesACM Journal on Emerging Technologies in Computing Systems10.1145/1543438.15434405:2(1-23)Online publication date: 16-Jul-2009
  • (2008)Threshold Voltage Control through Multiple Supply Voltages for Power-Efficient FinFET InterconnectsProceedings of the 21st International Conference on VLSI Design10.1109/VLSI.2008.117(220-227)Online publication date: 4-Jan-2008
  • Show More Cited By

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      cover image ACM Conferences
      GLSVLSI '05: Proceedings of the 15th ACM Great Lakes symposium on VLSI
      April 2005
      518 pages
      ISBN:1595930574
      DOI:10.1145/1057661
      • General Chair:
      • John Lach,
      • Program Chairs:
      • Gang Qu,
      • Yehea Ismail
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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      Publication History

      Published: 17 April 2005

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      Author Tags

      1. CMOS
      2. SOI
      3. double-gate
      4. nanotechnology
      5. silicide
      6. subthreshold leakage
      7. thin-body

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      GLSVLSI05: Great Lakes Symposium on VLSI 2005
      April 17 - 19, 2005
      Illinois, Chicago, USA

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      Cited By

      View all
      • (2012)Low-power design technique with ambipolar double gate devicesProceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures10.1145/2765491.2765495(14-21)Online publication date: 4-Jul-2012
      • (2009)Low-power FinFET circuit synthesis using multiple supply and threshold voltagesACM Journal on Emerging Technologies in Computing Systems10.1145/1543438.15434405:2(1-23)Online publication date: 16-Jul-2009
      • (2008)Threshold Voltage Control through Multiple Supply Voltages for Power-Efficient FinFET InterconnectsProceedings of the 21st International Conference on VLSI Design10.1109/VLSI.2008.117(220-227)Online publication date: 4-Jan-2008
      • (2008)Evaluation of multiple supply and threshold voltages for low-power FinFET circuit synthesisProceedings of the 2008 IEEE International Symposium on Nanoscale Architectures10.1109/NANOARCH.2008.4585795(77-84)Online publication date: 12-Jun-2008
      • (2007)CMOS logic design with independent-gate FinFETs2007 25th International Conference on Computer Design10.1109/ICCD.2007.4601953(560-567)Online publication date: Oct-2007
      • (2005)A Nanowire Array for Reconfigurable ComputingTENCON 2005 - 2005 IEEE Region 10 Conference10.1109/TENCON.2005.301252(1-6)Online publication date: Nov-2005

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