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Enhanced leakage reduction Technique by gate replacement
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 42nd annual conference on Design automation table of contents
Anaheim, California, USA
SESSION: Leakage analysis and optimization table of contents
Pages: 47 - 50  
Year of Publication: 2005
ISBN:1-59593-058-2
Authors
Lin Yuan  University of Maryland, College Park, MD
Gang Qu  University of Maryland, College Park, MD
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 1,   Downloads (12 Months): 21,   Citation Count: 6
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ABSTRACT

Input vector control (IVC) technique utilizes the stack effect in CMOS circuit to apply the minimum leakage vector (MLV) to the circuit at the sleep mode to reduce leakage. Additional logic gates can be inserted as control points to make it more effective. In this paper, we propose a gate replacement technique that further enhances the leakage reduction. The basic idea is to replace a gate that is in its worst leakage state by another library gate while keeping the circuit's correct functionality at the active mode. We also develop a divide-and-conquer approach that integrates a fast gate replacement heuristic, an optimal MLV search strategy for tree circuit, and a genetic algorithm to connect the tree circuits. We conduct experiments on the MCNC91 benchmark circuits. The results reveal that our technique can reduce additional 10% to 24% leakage over the best known IVC methods and the optimal MLV with no delay penalty and little area increase.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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J. Halter, and F. Najm, "A Gate-Level Leakage Power Reduction Method for Ultra Low Power CMOS Circuits", CICC, pp 475--478, 1997.
 
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M.C. Johnson, D. Somasekhar, and K. Roy, "Models and Algorithms for Bounds on Leakage in CMOS Circuits", IEEE Trans. on CAD, Vol. 18, pp. 714--725, 1999.
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CITED BY  6