| Timing analysis in presence of supply voltage and temperature variations |
| Full text |
Pdf
(182 KB)
|
| Source
|
International Symposium on Physical Design
archive
Proceedings of the 2006 international symposium on Physical design
table of contents
San Jose, California, USA
SESSION: Timing and variability
table of contents
Pages: 10 - 16
Year of Publication: 2006
ISBN:1-59593-299-2
|
|
Authors
|
|
B. Lasbouygues
|
STMicroelectronics, Crolles, France
|
|
R. Wilson
|
STMicroelectronics, Crolles, France
|
|
N. Azemard
|
University of Montpellier II, Montpellier, France
|
|
P. Maurine
|
University of Montpellier II, Montpellier, France
|
|
| Sponsors |
|
| Publisher |
|
| Bibliometrics |
Downloads (6 Weeks): 6, Downloads (12 Months): 50, Citation Count: 1
|
|
|
ABSTRACT
In the nanometer era, the physical verification of CMOS digital circuit becomes a complex task. Designers must account of numerous new factors that impose a drastic change in validation and physical verification methods. One of these major changes in timing verification to handle process variation lies in the progressive development of statistical static timing engines. However the statistical approach cannot capture accurately the deterministic variations of both the voltage and temperature variations. Therefore, we define a novel method, based on non-linear derating coefficients, to account of these environmental variations. Based on temperature and voltage drop CAD tool reports, this method allows computing the delay of logical paths considering the operating conditions of each cell.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
| |
1
|
C. Visweswariah. "Statistical timing of digital integrated circuits". IEEE International Solid-State Circuits Conference, CA, 2004.
|
| |
2
|
|
 |
3
|
|
 |
4
|
|
| |
5
|
Shih-Wei Sun and al, "Limitations of CMOS Supply-Voltage scaling by MOSFET threshold voltage variation", IEEE J. of Solid State Circuits, Vol.30, N°8, pp.947--949, August 1995.
|
| |
6
|
|
 |
7
|
Jingcao Hu , Youngsoo Shin , Nagu Dhanwada , Radu Marculescu, Architecting voltage islands in core-based system-on-a-chip designs, Proceedings of the 2004 international symposium on Low power electronics and design, August 09-11, 2004, Newport Beach, California, USA
[doi> 10.1145/1013235.1013283]
|
 |
8
|
|
| |
9
|
S.M. Sze,"Physics of semiconductor devices", Wiley ed. 1983.
|
| |
10
|
Changhae Park and al, "Reversal of temperature dependence of integrated circuits operating at very low voltages", Proc. IEDM conference, pp.71--74, 1995.
|
| |
11
|
B. Lasbouygues and al, "Temperature Dependency in UDSM Process" Power and Timing Modeling, Optimization and Simulation, 15th Int. Workshop, pp.693--703, 2005.
|
| |
12
|
P. Maurine and al, "Transition time modeling in deep submicron CMOS" IEEE Trans. on CAD, vol.21, n11, pp.1352--1363, 2002.
|
| |
13
|
B. Lasbouygues and al "Continuous representation of the performance of a CMOS library", European Solid-State Circuits, ESSIRC'03 Conf. pp.595--598, 16-18 Sept 2003.
|
| |
14
|
B. Lasbouygues and al, "Logical Effort Model Extension to Propagation Delay Representation", accept for publication in the IEEE transaction on computer aided design.
|
| |
15
|
T. Sakurai and A.R. Newton,"Alpha-power model, and its application to CMOS inverter delay and other formulas", J. Solid State Circuits vol. 25, pp. 584--594, April 1990.
|
| |
16
|
K.O. Jeppson, "Modeling the Influence of the Transistor Gain Ratio and the Input-to-Output Coupling Capacitance on the CMOS Inverter Delay", IEEE JSSC, Vol. 29, pp. 646--654, 1994.
|
| |
17
|
J. M. Daga , E. Ottaviano , D. Auvergne, Temperature effect on delay for low voltage applications, Proceedings of the conference on Design, automation and test in Europe, p.680-685, February 23-26, 1998, Le Palais des Congrés de Paris, France
|
| |
18
|
J.A. Power and al, "An Investigation of MOSFET Statistical and Temperature Effects", IEEE Int. Conf. on Microelectronic & Test Structures, Vol. 5, pp.202--207, March 1992.
|
| |
19
|
A. Osman and al, "An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation", IEEE JSSC, Vol. 30, No2, pp.147--150, Feb. 1995.
|
|