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ABSTRACT
In recent years many advances have been made in the development of molecular scale devices. Experimental data shows that these devices have potential for use in both memory and logic. This paper describes the challenges faced in building crossbar array based molecular memory, and develops a methodology to optimize molecular scale architectures based on experimental device data taken at room temperature. In particular, we discuss reading and writing such memory using CMOS and compiling a solution for easily reading device conductivity states (typically characterized by very small currents). Additionally, a metric is derived to determine the voltages for writing to the crossbar array. Simulation results, incorporating experimental device data, are presented using Cadence Spectre.
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CITED BY 2
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Garrett S. Rose , Yuxing Yao , James M. Tour , Adam C. Cabe , Nadine Gergel-Hackett , Nabanita Majumdar , John C. Bean , Lloyd R. Harriott , Mircea R. Stan, Designing CMOS/molecular memories while considering device parameter variations, ACM Journal on Emerging Technologies in Computing Systems (JETC), v.3 n.1, p.3-es, April 2007
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Nadine Gergel-Hackett , Garrett S. Rose , Peter Paliwoda , Christina A. Hacker , Curt A. Richter, On-chip characterization of molecular electronic devices using CMOS: the design and simulation of a hybrid circuit based on experimental molecular electronic device results, Proceedings of the 17th great lakes symposium on Great lakes symposium on VLSI, March 11-13, 2007, Stresa-Lago Maggiore, Italy
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