Synthesis of a wideband low noise amplifier

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Synthesis of a wideband low noise amplifier

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Great Lakes Symposium on VLSI archive
Proceedings of the 16th ACM Great Lakes symposium on VLSI table of contents

Philadelphia, PA, USA

SESSION: RF and data communication circuits table of contents

Pages: 57 - 62

Year of Publication: 2006

ISBN:1-59593-347-6

Authors

Abhishek Jajoo	Carnegie Mellon University, Pittsburgh, PA
Michael Sperling	IBM Corporation, Poughkeepsie, NY
Tamal Mukherjee	Carnegie Mellon University, Pittsburgh, PA

Sponsors

ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation

Publisher

ACM New York, NY, USA

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ABSTRACT

Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first gener-ation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor.

REFERENCES

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