| Efficient modeling of integrated narrow-band low noise amplifiers for design space exploration |
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Great Lakes Symposium on VLSI
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Proceedings of the 16th ACM Great Lakes symposium on VLSI
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Philadelphia, PA, USA
SESSION: Circuit design and modeling
table of contents
Pages: 187 - 191
Year of Publication: 2006
ISBN:1-59593-347-6
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Downloads (6 Weeks): 11, Downloads (12 Months): 33, Citation Count: 4
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ABSTRACT
In this paper, we present an analytical model for fully integrated CMOS narrow-band low noise amplifiers (LNA) that enables rapid design space exploration during the synthesis process. The analytical model captures the impact of parasitics on passive components and devices to accurately predict both impedance matching and noise figure. Our results indicate that the model provides on average 39.8% better accuracy in noise figure than several current analytical modeling techniques with five orders of magnitude improvement in simulation time when compared with a circuit-level simulator. Given its speed and accuracy, our LNA model is well-suited for design space exploration.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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