| An indirect current sensing technique for IDDQ and IDDT tests |
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Great Lakes Symposium on VLSI
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Proceedings of the 16th ACM Great Lakes symposium on VLSI
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Philadelphia, PA, USA
SESSION: Testing and noise analysis
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Pages: 235 - 240
Year of Publication: 2006
ISBN:1-59593-347-6
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Downloads (6 Weeks): 4, Downloads (12 Months): 32, Citation Count: 0
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ABSTRACT
An indirect current sensing technique for IDDQ and IDDT tests is proposed in this paper. This is accomplished by utilizing the pervasive on-chip voltage regulators and thus have little or no impact on CUT's design and its performance. We demonstrate that the proposed technique can be applied to both IDDQ and IDDT tests. Experiments were successfully conducted in SPICE simulations assuming the TSMC 0.18μm CMOS technology.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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