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An indirect current sensing technique for IDDQ and IDDT tests
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Source Great Lakes Symposium on VLSI archive
Proceedings of the 16th ACM Great Lakes symposium on VLSI table of contents
Philadelphia, PA, USA
SESSION: Testing and noise analysis table of contents
Pages: 235 - 240  
Year of Publication: 2006
ISBN:1-59593-347-6
Authors
Chuen-Song Chen  University of Rhode Island, Kingston, RI
Jien-Chung Lo  University of Rhode Island, Kingston, RI
Tian Xia  University of Vermont, Burlington, VT
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

An indirect current sensing technique for IDDQ and IDDT tests is proposed in this paper. This is accomplished by utilizing the pervasive on-chip voltage regulators and thus have little or no impact on CUT's design and its performance. We demonstrate that the proposed technique can be applied to both IDDQ and IDDT tests. Experiments were successfully conducted in SPICE simulations assuming the TSMC 0.18μm CMOS technology.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Chuen-Song Chen: colleagues
Jien-Chung Lo: colleagues
Tian Xia: colleagues