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Challenges in sleep transistor design and implementation in low-power designs
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 43rd annual conference on Design automation table of contents
San Francisco, CA, USA
SESSION: Session 8: leakage, power analysis and optimization table of contents
Pages: 113 - 116  
Year of Publication: 2006
ISBN:1-59593-381-6
Authors
Kaijian Shi  Synopsys Inc., Dallas, TX
David Howard  ARM Ltd., Cambridge, UK
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 11,   Downloads (12 Months): 78,   Citation Count: 5
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ABSTRACT

Optimum power gating sleep transistor design and implementation are critical to a successful low-power design. This paper describes important considerations for the sleep transistor design and implementation including header or footer switch selection, sleep transistor distribution choices and sleep transistor gate length, width and body bias optimization for area, leakage and efficiency. It also investigated various power-on current rush control methods for the sleep transistor implementation.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Kaushik Roy, Saibal Mukhopadhyay, and Hamid Mahmoodi-meimand, "Leakage current mechanism and leakage reduction techniques in deep-submicrometer CMOS circuits", Proc. IEEE Vol. 91, no. 2, Feb. 2003
 
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Satoshi Shigematsu et. al., "A 1-V high-speed MTCMOS circuit scheme for power-down application circuits", IEEE J. Solid-State Circuits, vol. 32, no. 6, June, 1997
 
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Benton H Calhoun, Frank A Honore and Anantha P Chandrakasan, "A leakage reduction methodology for distributed MTCMOS", IEEE J. Solid-State Circuits, vol. 39, no. 5, May, 2004, pp. 818--826
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Collaborative Colleagues:
Kaijian Shi: colleagues
David Howard: colleagues