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A statistical framework for post-silicon tuning through body bias clustering
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Source International Conference on Computer Aided Design archive
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design table of contents
San Jose, California
SESSION: Variation modeling table of contents
Pages: 39 - 46  
Year of Publication: 2006
ISBN ~ ISSN:1092-3152 , 1-59593-389-1
Authors
Sarvesh H Kulkarni  University of Michigan, Ann Arbor, MI
Dennis Sylvester  University of Michigan, Ann Arbor, MI
David Blaauw  University of Michigan, Ann Arbor, MI
Sponsors
IEEE-CS : Computer Society
IEEE-CAS : Circuits & Systems
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 2,   Downloads (12 Months): 68,   Citation Count: 3
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ABSTRACT

Adaptive body biasing (ABB) is a powerful technique that allows post-silicon tuning of individual manufactured dies such that each die optimally meets the delay and power constraints. Assigning individual bias control to each gate leads to severe overhead, rendering the method impractical. However, assigning a single bias control to all gates in the circuit prevents the method from compensating for intra-die variation and greatly reduces its effectiveness. In this paper, we propose a new variability-aware method that clusters gates at design time into a handful of carefully chosen independent body bias groups, which are then individually tuned post-silicon for each die. We show that this allows us to obtain near-optimal performance and power characteristics with minimal overhead. For each gate, we generate the probability distribution of its post-silicon ideal body bias voltage using an efficient sampling method. We then use these distributions and their correlations to drive a statistically-aware clustering technique. We study the physical design constraints and show how the area and wirelength overhead can be significantly limited using the proposed method. Compared to a fixed design time based dual threshold voltage assignment method, we improve leakage power by 38-71% while simultaneously reducing the standard deviation of delay by 2-9X.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

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S. Nassif, "Delay variability: sources, impacts and trends," Proc. ISSCC, pp. 368--369, 2000.
 
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J. Roy et al., "ECO-System: embracing the change in placement," Tech. Report CSE-TR-519-06, Univ. of Michigan. web.eecs.umich.edu/techreports/cse/2006/CSE-TR-519-06.pdf
 
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K. Roy et al., "Leakage current mechanisms and leakage reduction techniques in deep-submicron CMOS circuits," Proc. IEEE, pp. 305--327, 2003.
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J. Tschanz et al., "Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage," IEEE JSSC, pp. 1396--1402, 2002.


Collaborative Colleagues:
Sarvesh H Kulkarni: colleagues
Dennis Sylvester: colleagues
David Blaauw: colleagues