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Computational simulation of electromigration induced damage in copper interconnects

Published: 16 July 2007 Publication History

Abstract

Current density levels are expected to increase by orders of magnitude in next generation power electronics and nanoelectronics. Electromigration which occur under high current density is the major concern for the nanoelectronics industry. Using a general purpose computational model, which is capable of simulating coupled electromigration and thermo-mechanical stress evolution, several dual damascene copper interconnect structures have been investigated for electromigration damage. Different diffusion boundary conditions including blocking and non blocking boundary conditions, current crowding effects, interface diffusion effects and material plasticity have been considered. Different damage criteria are used for quantifying material degradation. The computational simulation results match the experimental findings; therefore the model proves to be a useful tool for simulating damage evolution in electronics interconnects.

References

[1]
Li, Baozhen, Timothy D. Sullivan, Tom C. Lee, and Dinesh Badami. "Reliability Challenges for Copper Interconnects." Microelectronics Reliability 44, no. 3 (2004): 365--80.
[2]
Basaran, C., Minghui Lin, and Hua Ye. "A Thermodynamic Model for Electrical Current Induced Damage." International Journal of Solids and Structures 40, no. 26 (2003): 7315--27.
[3]
Sarychev, M. E., Yu V. Zhitnikov, L. Borucki, C. L. Liu, and T. M. Makhviladze. "General Model for Mechanical Stress Evolution During Electromigration." Journal of Applied Physics 86, no. 6 (1999): 3068--75.
[4]
Ogawa, E. T., Lee Ki-Don, V. A. Blaschke, and P. S. Ho. "Electromigration Reliability Issues in Dual-Damascene Cu Interconnections." Reliability, IEEE Transactions on 51, no. 4 (2002): 403--19.
[5]
Hu, C. K., R. Rosenberg, and K. Y. Lee. "Electromigration Path in Cu Thin-Film Lines." Applied Physics Letters 74, no. 20 (1999): 2945.
[6]
Tu, K. N., K. N. Tu, C. C. Yeh, C. C. Yeh, C. Y. Liu, C. Y. Liu, Chih Chen, and Chen Chih. "Effect of Current Crowding on Vacancy Diffusion and Void Formation in Electromigration." Applied Physics Letters 76, no. 8 (2000).

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SCSC '07: Proceedings of the 2007 Summer Computer Simulation Conference
July 2007
1363 pages
ISBN:1565553160

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  • SCS: Society for Modeling and Simulation International

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Society for Computer Simulation International

San Diego, CA, United States

Publication History

Published: 16 July 2007

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Author Tags

  1. copper interconnects
  2. damage mechanics
  3. electromigration
  4. electronics packaging reliability
  5. thin film

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  • Research-article

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SCSC07
Sponsor:
  • SCS
SCSC07: 2007 Summer Computer Simulation Conference
July 16 - 19, 2007
California, San Diego

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