- 1.J. E. Hall, D. E. Hocevar, P. Yang_and M. J. McGraw, "SPIDER- a CAD system for modeling VLSI metallization patterns," IEEE Trans. Computer-Aided Design, vol. CAD-36, pp. 1023-1031, Nov. 1987.Google Scholar
- 2.R. H. ~u E. Rosenbaum. W. Y. Chan C. C. Li E. Minami, K. ~uader, P. K. Ko, and C. Hu,' "Berkley reliability tools-BERT," IEEE Trans. Computer-Aided Design, vol. 12, pp. 1524-1534, Oct. 1993.Google ScholarDigital Library
- 3.F. N. Najm, R. Burch, P. Yang, and I. N. Hajj, "Probabilistic simulation for reliability analysis of CMOS VLSIcircuits," IEEE Trans. Computer-Aided Design, vol. 9, pp. 439-450, Apr. 1990.Google ScholarCross Ref
- 4.S. Devadas, K. Keutzer, and J. White, "Estimation of power dissipation in CMOS combinational circuits using boolean function manil2ulation," IEEE Trans. Computer-Aided Design, vol. 11, pp. 373-383, Mar. 1992.Google ScholarDigital Library
- 5.J. R. Black, "Electromigration failure modes in aluminum metallization for semiconductor devices," Proc. IEEE, vol. 57, pp. 1587-1594, Sept. 1969.Google ScholarCross Ref
- 6.L. M. Ting, J. S. May, W. R. Hunter, and J. W. McPherson, "AC electromigration characterization and modeling of multilayered interconnects," in Proc. IEEE Int. Reliabihty Physics Symposium, pp. 311-316, 1993.Google Scholar
- 7.S. L. Su, V. B. Rao and T. N. Trick "HPEX: A hierarchical parasitic circuit extr'actor," in Proc. 'ACM/IEEE Design Automation Conf., pp. 566-569, 1987. Google ScholarDigital Library
- 8.H.-U. Schreiber, "Electromigration threshold in aluminum films," Solid State Electron, vol. 28, no. 6, p. 617, 1985.Google ScholarCross Ref
- 9.J.J. Clement, "Vacancy supersaturation model for electromigration failure under DC and pulsed DC stress," Journal of Applied Physics, vol. 91, pp. 4264-4268, May 1992.Google ScholarCross Ref
- 10.C.-C. Teng,. A. M. Hill, and S. M. Kang, "Esitmation of maximum tranmtlon counts at internal nodes in CMOS VLSI circuits," in Proc. A CM/IEEE Int. Conf. Computer-Aided Design, pp. 366-370, Nov. 1995. Google ScholarDigital Library
- 11.F. Najm and M. Y. Zhang, "Extreme delay sensitivity and the worst-case switching activity in VLSI circuits," in Proc. ACM/IEEE Design Automation Conf., pp. 623-627, 1995. Google ScholarDigital Library
- 12.R. Burch, F. N. Najm, P. Yang, and T. N. Trick, "A monte carlo approach for power estimation," IEEE Trans. VLSI Systems, vol. 1, pp. 63-71, Mar. 1993.Google ScholarDigital Library
- 13.J. Kim, S. M. Kang, and S. Sapatnekar, "High performance CMOS macromodule layout synthesis," in Proc. IEEE Int. Symposium on Circuits and Systems, pp. 179-182, May 1994.Google Scholar
- 14.Y.-K. Cheng and S. M. Kang, "Chip-level thermal simulator to predict vlsi chip temperature," in Proc. IEEE Int. Symposium on Circuits and Systems, pp. 1392-1395, 1995.Google ScholarCross Ref
- 15.C.-C. Teng, Y.-K. Cheng, E. Rosenbaum, and S. M. Kang. "item: A chip-level electromigration reliability diagnosis tooJ using electrothermal timing simulation," in Proc. IEEE Int. Reliability physics Symposium, Apr. 1996Google Scholar
Index Terms
Hierarchical electromigration reliability diagnosis for VLSI interconnects
Recommendations
Optimization of throughput performance for low-power VLSI interconnects
The technique of optimal voltage scaling and repeater insertion is analyzed in this paper to reduce power dissipation on global interconnects. An analytical model for the maximum bitrate of a very large scale integration interconnect with repeaters has ...
Impact of increased resistive losses of metal interconnects upon ULSI devices reliability and functionality
The impact of increasing resistive losses of on-die metal interconnects upon device reliability and functionality has been studied. The signal waveforms experimentally measured at the far-end of on-die transmission lines (45nm CMOS technology test chip) ...
Computational simulation of electromigration induced damage in copper interconnects
SCSC '07: Proceedings of the 2007 Summer Computer Simulation ConferenceCurrent density levels are expected to increase by orders of magnitude in next generation power electronics and nanoelectronics. Electromigration which occur under high current density is the major concern for the nanoelectronics industry. Using a ...
Comments