Keonsoo Ha
ABSTRACT
The read-disturb problem is emerging as one of the main reliability issues for future high-density NAND flash memory. A read-disturb error, which causes data loss, occurs to data in a page when a large number of reads are performed to its neighboring pages in the same block. In this paper, we propose a novel read-disturb management technique which reduces the frequency of expensive data migrations needed for avoiding read-disturb errors. Our technique proactively converts highly skewed read accesses to a small number of blocks into more balanced read accesses to a large number of blocks by intelligently changing data block locations accessed. Our experimental results show that our technique is effective in handling the read-disturb problem, reducing the time overhead of data migrations on average by 50% over an FTL based on the existing read-disturb management technique.
- http://iotta.snia.org/traces/158.Google Scholar
- http://traces.cs.umass.edu/index.php/Storage/Storage.Google Scholar
- A. A. Chien et al. Moore's Law: The First Ending and A New Beginning. Tech. rep., 2012.Google Scholar
- D. Narayanan et al. Write Off-Loading: Practical Power Management for Enterprise Storage. ACM Transactions on Storage 4, 3 (2008), 1--23. Google ScholarDigital Library
- H. H. Frost et al. Efficient Reduction of Read Disturb Errors in NAND Flash Memory, 2010. US Patent 7,818,525.Google Scholar
- J. Zhang et al. Synthesizing Representative I/O Workloads for TPC-H. In Proc. of the International Symposium on High Performance Computer Architecture (2004). Google ScholarDigital Library
- M. Kang et al. Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories. Japanese Journal of Applied Physics 48, 4 (2009), 04C062-1-04C062-6.Google ScholarCross Ref
- S. H. Shin et al. A New 3-bit Programming Algorithm Using SLC-to-TLC Migration for 8MB/s High Performance TLC NAND Flash Memory. In Proc. of the IEEE Symposium on VLSI Circuits (2012).Google ScholarCross Ref
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