Rongtian Zhang
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Index Terms
- Double-gate fully-depleted SOI transistors for low-power high-performance nano-scale circuit design
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Double-gate SOI devices for low-power and high-performance applications
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Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
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In this paper, nanoscale metal-oxide-semiconductor field-effect transistor MOSFET device circuit co-design is presented with an aim to reduce the gate leakage curren t in VLSI logic circuits. Firstly, gate leakage current is modeled through high-k ...
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